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P1065ATF-VB Product details
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Product Introduction
P1065ATF is a high voltage N-Channel MOSFET in TO220F package, designed for high voltage and medium current applications. It has a drain-source voltage (VDS) of 650V, suitable for various power management and switching applications. The reliability and stability of this MOSFET in high voltage environment make it an ideal choice for power conversion, inverters and other high voltage equipment.
P1065ATF is a high voltage N-Channel MOSFET in TO220F package, designed for high voltage and medium current applications. It has a drain-source voltage (VDS) of 650V, suitable for various power management and switching applications. The reliability and stability of this MOSFET in high voltage environment make it an ideal choice for power conversion, inverters and other high voltage equipment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 830mΩ @ VGS=10V
- **Maximum drain current (ID)**: 10A
- **Technology**: Plannar
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 830mΩ @ VGS=10V
- **Maximum drain current (ID)**: 10A
- **Technology**: Plannar
Domain and module applications：
Applications and modules: The P1065ATF is widely used in power conversion, motor drive, lighting control and inverter. Due to its high drain-source voltage, it is suitable for high-voltage power applications such as switching power supplies and uninterruptible power supply (UPS) systems to ensure stable output current. In addition, in motor drive systems, the P1065ATF can efficiently control current and optimize power usage. In lighting control applications, fast switching can be achieved to ensure good performance. The TO220F package design of this MOSFET also provides good heat dissipation characteristics, suitable for applications requiring high power handling.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
