P0920AD-VB Product details
Product introduction:
P0920AD-VB is a high performance N-channel MOSFET in TO252 package with 200V drain-source voltage and ±20V gate-source voltage range. This device uses Trench technology and is designed for high-efficiency power management and switching applications, suitable for a variety of high voltage applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | 245mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **VDS (drain-source voltage): ** 200V
- **VGS (gate-source voltage): ** ±20V
- **Vth (threshold voltage): ** 3V
- **RDS(ON) (on-resistance): ** 245mΩ @ VGS=10V
- **ID (maximum drain current): ** 10A
- **Technology type: ** Trench
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Domain and module applications:
P0920AD-VB is widely used in switching power supplies, DC-DC converters and motor drive modules. Its high voltage capability and low on-resistance make it an excellent choice in power management systems, effectively reducing energy loss and improving system efficiency. The high reliability and stability of this MOSFET also make it an ideal choice in industrial automation and consumer electronics.
Technical support:
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