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P0903BSG-VB Product details

Product introduction:

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P0903BSG-VB is a high-efficiency N-channel MOSFET in TO263 package with 30V drain-source voltage and ±20V gate-source voltage range. Using Trench technology, the device is designed for high current applications, providing extremely low on-resistance, suitable for power management and switch control.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 30V 1.7V 50A 12mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 30V 1.7V 50A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 30V 1.7V 50A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
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- **VDS (drain-source voltage): ** 30V
- **VGS (gate-source voltage): ** ±20V
- **Vth (threshold voltage): ** 1.7V
- **RDS(ON) (on-resistance): ** 18mΩ @ VGS=4.5V; 12mΩ @ VGS=10V
- **ID (maximum leakage current): ** 50A
- **Technology type: ** Trench

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Domain and module applications:

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P0903BSG-VB is widely used in DC-DC converters, LED drivers and motor control systems. Its low on-resistance makes it an excellent choice for high-efficiency power modules, which can effectively reduce power consumption and heat generation. In consumer electronics, automotive electronics and industrial equipment, this MOSFET provides high reliability and good thermal management performance to meet high current requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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