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P0803BDG-VB Product details
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Product Introduction
**P0803BDG-VB** is a high-efficiency single N-channel MOSFET in TO252 package, designed for 30V voltage applications. The device has extremely low on-resistance of 6mΩ (VGS = 4.5V) and 5mΩ (VGS = 10V), and can withstand drain currents up to 80A. P0803BDG-VB uses Trench technology to provide excellent switching performance and energy efficiency, and is very suitable for high-power and high-efficiency power management and switching applications.
**P0803BDG-VB** is a high-efficiency single N-channel MOSFET in TO252 package, designed for 30V voltage applications. The device has extremely low on-resistance of 6mΩ (VGS = 4.5V) and 5mΩ (VGS = 10V), and can withstand drain currents up to 80A. P0803BDG-VB uses Trench technology to provide excellent switching performance and energy efficiency, and is very suitable for high-power and high-efficiency power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: P0803BDG-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 80A
- **Technology**: Trench technology
- **Model**: P0803BDG-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 80A
- **Technology**: Trench technology
Domain and module applications：
Applications and Module Examples
1. **Power Management**:
- P0803BDG-VB can be widely used in efficient DC-DC converters and power switches, which can significantly reduce energy loss and improve overall system efficiency, and is suitable for the power needs of various electronic devices.
2. **Electric Vehicle**:
- In the motor drive and power conversion system of electric vehicles, this MOSFET provides efficient switching control and can handle high current loads, thereby improving the performance and endurance of electric vehicles.
3. **Data Center**:
- This device can be used in the power distribution system of data centers to help achieve efficient power management, reduce power consumption, improve cooling efficiency, and reduce overall operating costs.
4. **Consumer Electronics**:
- In smartphones and other consumer electronic devices, P0803BDG-VB can be used for power management to ensure fast charging and stable current output to improve user experience.
5. **Industrial Application**:
- This MOSFET is suitable for high-power applications in industrial equipment, such as power adapters, industrial control equipment and sensors, providing reliable performance and high efficiency to meet the requirements of industrial environments.
P0803BDG-VB is a powerful and high-efficiency MOSFET that is widely used in multiple fields to meet the needs of high power and high efficiency.
1. **Power Management**:
- P0803BDG-VB can be widely used in efficient DC-DC converters and power switches, which can significantly reduce energy loss and improve overall system efficiency, and is suitable for the power needs of various electronic devices.
2. **Electric Vehicle**:
- In the motor drive and power conversion system of electric vehicles, this MOSFET provides efficient switching control and can handle high current loads, thereby improving the performance and endurance of electric vehicles.
3. **Data Center**:
- This device can be used in the power distribution system of data centers to help achieve efficient power management, reduce power consumption, improve cooling efficiency, and reduce overall operating costs.
4. **Consumer Electronics**:
- In smartphones and other consumer electronic devices, P0803BDG-VB can be used for power management to ensure fast charging and stable current output to improve user experience.
5. **Industrial Application**:
- This MOSFET is suitable for high-power applications in industrial equipment, such as power adapters, industrial control equipment and sensors, providing reliable performance and high efficiency to meet the requirements of industrial environments.
P0803BDG-VB is a powerful and high-efficiency MOSFET that is widely used in multiple fields to meet the needs of high power and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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