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P062ABDD-VB Product details
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P062ABDD-VB is a high efficiency N-channel MOSFET in TO252 package with 30V drain-source voltage and 20V gate-source voltage range. This device uses Trench technology to provide extremely low on-resistance, suitable for high efficiency power management and switching applications.
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P062ABDD-VB is a high efficiency N-channel MOSFET in TO252 package with 30V drain-source voltage and 20V gate-source voltage range. This device uses Trench technology to provide extremely low on-resistance, suitable for high efficiency power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
: **
- **VDS (drain-source voltage): ** 30V
- **VGS (gate-source voltage): ** ±20V
- **Vth (threshold voltage): ** 1.7V
- **RDS(ON) (on-resistance): ** 3mΩ @ VGS=4.5V; 2mΩ @ VGS=10V
- **ID (maximum leakage current): ** 100A
- **Technology type: ** Trench
**
- **VDS (drain-source voltage): ** 30V
- **VGS (gate-source voltage): ** ±20V
- **Vth (threshold voltage): ** 1.7V
- **RDS(ON) (on-resistance): ** 3mΩ @ VGS=4.5V; 2mΩ @ VGS=10V
- **ID (maximum leakage current): ** 100A
- **Technology type: ** Trench
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Domain and module applications：
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P062ABDD-VB is widely used in high-efficiency power supplies, DC motor drives, and high-frequency switching power supplies. Its low on-resistance characteristics enable it to provide excellent thermal efficiency in power management modules, especially in power conversion and battery management systems. In addition, this MOSFET is also suitable for high-current applications in high-performance computing devices and communication equipment.
P062ABDD-VB is widely used in high-efficiency power supplies, DC motor drives, and high-frequency switching power supplies. Its low on-resistance characteristics enable it to provide excellent thermal efficiency in power management modules, especially in power conversion and battery management systems. In addition, this MOSFET is also suitable for high-current applications in high-performance computing devices and communication equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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