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P0550AD-VB Product details

Product introduction:

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P0550AD-VB is a high performance N-channel MOSFET in TO252 package with 650V drain-source voltage and 30V gate-source voltage range. The device uses SJ_Multi-EPI technology to provide low on-resistance and high efficiency in high voltage applications, making it ideal for power management and switch control.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 650V 3.5V 5A 1000mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 650V 3.5V 5A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 650V 3.5V 5A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
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- **VDS(drain-source voltage):** 650V
- **VGS(gate-source voltage):** ±30V
- **Vth(threshold voltage):** 3.5V
- **RDS(ON)(on-resistance):** 1000mΩ @ VGS=10V
- **ID(maximum drain current):** 5A
- **Technology type:** SJ_Multi-EPI

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Domain and module applications:

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P0550AD-VB is suitable for a variety of high voltage applications, including switching power supplies, DC-DC converters, and industrial automation control systems. In LED drivers and motor control modules, it can effectively provide stable switching performance and low losses, thereby improving the overall efficiency of the system. The high voltage and high current capabilities of this MOSFET make it very popular in the field of power management and energy conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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