中文
English
NVD6824NLT4G-VB Product details
Back to previous pageProduct introduction：
NVD6824NLT4G-VB Product Introduction
NVD6824NLT4G-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and high current applications. The device has low on-resistance and good thermal performance, suitable for a variety of power management and switching circuits, which can significantly improve the efficiency and reliability of the system.
NVD6824NLT4G-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and high current applications. The device has low on-resistance and good thermal performance, suitable for a variety of power management and switching circuits, which can significantly improve the efficiency and reliability of the system.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS**: 100V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS=10V
- **Maximum drain current (ID)**: 45A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS**: 100V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS=10V
- **Maximum drain current (ID)**: 45A
- **Technology**: Trench
Domain and module applications：
Applications and modules: NVD6824NLT4G-VB is widely used in high voltage power converters, DC-DC converters and motor drive modules. It is very suitable for industrial power management, LED lighting drivers and power tools, providing efficient power solutions, reducing heat generation and improving overall system efficiency. This MOSFET has demonstrated reliable performance and stability in power electronics, consumer electronics and industrial automation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
