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NVD6820NLT4G-VB Product details
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NVD6820NLT4G-VB Product Introduction
NVD6820NLT4G-VB is a high-efficiency unipolar N-channel MOSFET in TO252 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 80V, suitable for a variety of power management and switching applications. The device has a threshold voltage (Vth) of 3V, ensuring reliable operation under a variety of driving conditions. The on-resistance is 5mΩ (at VGS=10V), which effectively reduces switching losses and improves overall energy efficiency.
NVD6820NLT4G-VB is a high-efficiency unipolar N-channel MOSFET in TO252 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 80V, suitable for a variety of power management and switching applications. The device has a threshold voltage (Vth) of 3V, ensuring reliable operation under a variety of driving conditions. The on-resistance is 5mΩ (at VGS=10V), which effectively reduces switching losses and improves overall energy efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: NVD6820NLT4G-VB
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 5mΩ (VGS=10V)
- **Maximum drain current (ID)**: 75A
- **Technology**: Trench
- **Model**: NVD6820NLT4G-VB
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 5mΩ (VGS=10V)
- **Maximum drain current (ID)**: 75A
- **Technology**: Trench
Domain and module applications：
Applications and modules
1. **Power management**: NVD6820NLT4G-VB is widely used in high-efficiency DC-DC converters and switching power supplies. It can efficiently convert and distribute power and is suitable for power adapters and chargers.
2. **Electric drive system**: This MOSFET can be used as a motor drive switch to improve the efficiency and performance of the motor, especially suitable for power tools and electric vehicles.
3. **LED lighting**: Due to its extremely low on-resistance, this device is very suitable for LED drive circuits, which can stably control the LED current, improve brightness and extend service life.
4. **Automotive electronics**: In automotive electronics applications, NVD6820NLT4G-VB can be used for battery management systems and power distribution, improving system reliability and overall performance.
5. **Consumer electronics**: This MOSFET also performs well in smart home devices and portable electronics, providing designers with high-efficiency and compact design solutions to meet the needs of modern electronic products.
With its excellent performance, NVD6820NLT4G-VB demonstrates its importance in multiple fields and provides reliable support for various electronic applications.
1. **Power management**: NVD6820NLT4G-VB is widely used in high-efficiency DC-DC converters and switching power supplies. It can efficiently convert and distribute power and is suitable for power adapters and chargers.
2. **Electric drive system**: This MOSFET can be used as a motor drive switch to improve the efficiency and performance of the motor, especially suitable for power tools and electric vehicles.
3. **LED lighting**: Due to its extremely low on-resistance, this device is very suitable for LED drive circuits, which can stably control the LED current, improve brightness and extend service life.
4. **Automotive electronics**: In automotive electronics applications, NVD6820NLT4G-VB can be used for battery management systems and power distribution, improving system reliability and overall performance.
5. **Consumer electronics**: This MOSFET also performs well in smart home devices and portable electronics, providing designers with high-efficiency and compact design solutions to meet the needs of modern electronic products.
With its excellent performance, NVD6820NLT4G-VB demonstrates its importance in multiple fields and provides reliable support for various electronic applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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