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NVD6416ANLT4G-VB Product details
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Product Introduction
NVD6416ANLT4G is a high-efficiency N-Channel MOSFET in TO252 package with 100V drain-source voltage (VDS) and moderate on-resistance, designed to meet the needs of various high-voltage applications. This MOSFET provides reliable performance and is widely used in power management and switching power supply fields.
NVD6416ANLT4G is a high-efficiency N-Channel MOSFET in TO252 package with 100V drain-source voltage (VDS) and moderate on-resistance, designed to meet the needs of various high-voltage applications. This MOSFET provides reliable performance and is widely used in power management and switching power supply fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 25A | 55mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 25A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 25A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 57mΩ @ VGS=4.5V
- 55mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 25A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 57mΩ @ VGS=4.5V
- 55mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 25A
- **Technology**: Trench
Domain and module applications：
Applications and modules: NVD6416ANLT4G is widely used in power management, DC-DC converters and industrial control. Its high voltage tolerance makes it particularly suitable for high-efficiency switching power supply designs that require 100V voltage, which can effectively reduce energy loss. In industrial control systems, this MOSFET can provide stable current output and enhance system reliability. In addition, the TO252 package design also performs well in applications with limited space, meeting the diverse needs of modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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