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NVD6415ANLT4G-VB Product details

Product introduction:

NVD6415ANLT4G-VB Product Introduction
NVD6415ANLT4G-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and medium to high current applications. The device has relatively low on-resistance and good thermal management performance, making it ideal for high-efficiency switching power supplies and power management solutions.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 100V 1.8V 40A 30mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 100V 1.8V 40A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 100V 1.8V 40A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS**: 100V
- **VGS**: ±20V
- **Vth**: 1.8V
- **RDS(ON)**: 35mΩ @ VGS=4.5V, 30mΩ @ VGS=10V
- **ID**: 40A
- **Technology**: Trench

Domain and module applications:

Application fields and modules: NVD6415ANLT4G-VB is widely used in power management, DC-DC converters, LED drivers and power tools. Its low on-resistance and high voltage carrying capacity make it superior in situations requiring high efficiency and reliability, especially suitable for use in industrial equipment, automotive electronics and high-performance computers to ensure system stability and energy efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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