NVD6415ANLT4G-VB Product details
Product introduction:
NVD6415ANLT4G-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and medium to high current applications. The device has relatively low on-resistance and good thermal management performance, making it ideal for high-efficiency switching power supplies and power management solutions.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS**: 100V
- **VGS**: ±20V
- **Vth**: 1.8V
- **RDS(ON)**: 35mΩ @ VGS=4.5V, 30mΩ @ VGS=10V
- **ID**: 40A
- **Technology**: Trench
Domain and module applications:
Technical support:
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