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NVD6414ANT4G-VB Product details
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Product Introduction
NVD6414ANT4G-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and medium power applications. Its rated VDS is 100V, combined with good conduction performance and reasonable on-resistance, making it perform well in various power management and switching applications, and able to work stably under high load conditions.
NVD6414ANT4G-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and medium power applications. Its rated VDS is 100V, combined with good conduction performance and reasonable on-resistance, making it perform well in various power management and switching applications, and able to work stably under high load conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS**: 100V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 40A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS**: 100V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 40A
- **Technology**: Trench
Domain and module applications：
Applications and modules: NVD6414ANT4G-VB is widely used in DC-DC converters, power amplifiers, and electric vehicle drive circuits. Its higher rated voltage and good conduction characteristics make it suitable for use in power management and high-voltage circuits, which can significantly reduce energy losses. In renewable energy and industrial control systems, this MOSFET can also provide stable performance and efficient power conversion. In addition, it can also optimize power control in consumer electronics and home appliances, ensuring efficient operation and longer service life of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
