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NVD5890N-VB Product details
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NVD5890N-VB Product Introduction
The NVD5890N-VB is a high-performance N-channel MOSFET in a TO252 package designed for medium and high voltage applications. The device has a high current carrying capability and ultra-low on-resistance, making it an excellent performer in high-efficiency power supplies and switching circuits. With a VDS of 40V and a VGS of ±20V, it is suitable for power management and load switching applications, providing excellent thermal performance and reliability.
The NVD5890N-VB is a high-performance N-channel MOSFET in a TO252 package designed for medium and high voltage applications. The device has a high current carrying capability and ultra-low on-resistance, making it an excellent performer in high-efficiency power supplies and switching circuits. With a VDS of 40V and a VGS of ±20V, it is suitable for power management and load switching applications, providing excellent thermal performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | 1.6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 40V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 3V
- **RDS(ON) (on-resistance)**:
- 3mΩ @ VGS = 4.5V
- 1.6mΩ @ VGS = 10V
- **ID (continuous leakage current)**: 120A
- **Technology**: Trench technology
- **Package type**: TO252
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 40V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 3V
- **RDS(ON) (on-resistance)**:
- 3mΩ @ VGS = 4.5V
- 1.6mΩ @ VGS = 10V
- **ID (continuous leakage current)**: 120A
- **Technology**: Trench technology
Domain and module applications：
Applications and modules
The wide range of applications of NVD5890N-VB covers many fields, and the following are some specific examples:
1. **Switching power supply**: This MOSFET is used as the main switching element in high-efficiency switching power supplies, which helps to improve energy conversion efficiency and reduce system power consumption.
2. **Motor drive**: In motor control systems, NVD5890N-VB can withstand high currents and is suitable for DC motor and stepper motor drives to ensure smooth operation.
3. **Power management system**: In various power management applications, this device is capable of fast switching and high efficiency, suitable for load switching and power distribution.
4. **Consumer electronics**: In consumer electronics such as smartphones and tablets, NVD5890N-VB can be used for battery power management to improve the endurance of the device.
5. **Industrial equipment**: In industrial automation and control systems, this MOSFET provides stable performance to meet the needs of high loads and high voltages.
NVD5890N-VB has become the preferred device for design engineers in multiple applications due to its excellent features.
The wide range of applications of NVD5890N-VB covers many fields, and the following are some specific examples:
1. **Switching power supply**: This MOSFET is used as the main switching element in high-efficiency switching power supplies, which helps to improve energy conversion efficiency and reduce system power consumption.
2. **Motor drive**: In motor control systems, NVD5890N-VB can withstand high currents and is suitable for DC motor and stepper motor drives to ensure smooth operation.
3. **Power management system**: In various power management applications, this device is capable of fast switching and high efficiency, suitable for load switching and power distribution.
4. **Consumer electronics**: In consumer electronics such as smartphones and tablets, NVD5890N-VB can be used for battery power management to improve the endurance of the device.
5. **Industrial equipment**: In industrial automation and control systems, this MOSFET provides stable performance to meet the needs of high loads and high voltages.
NVD5890N-VB has become the preferred device for design engineers in multiple applications due to its excellent features.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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