NVD5890NT4G-VB Product details
Product introduction:
NVD5890NT4G-VB is a high-efficiency single N-channel MOSFET in TO252 package, designed for high voltage and high current applications. Its low on-resistance and excellent thermal performance make it very suitable for efficient power management and power conversion to ensure stable system operation.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | 1.6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS**: 40V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 1.6mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 120A
- **Technology**: Trench technology
Domain and module applications:
NVD5890NT4G-VB is widely used in DC-DC converters, battery management systems and switching power supplies. It plays a key role in electric vehicles, industrial automation and high-performance consumer electronics, effectively improving the energy efficiency and reliability of the system and meeting high power requirements.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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