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NVD5890NL-VB Product details
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Product Introduction
NVD5890NL-VB is a high-performance N-channel MOSFET in TO252 package, designed for medium to high voltage and high current applications. Its extremely low on-resistance and excellent thermal performance enable it to perform well under high load conditions, making it ideal for power management and switching applications.
NVD5890NL-VB is a high-performance N-channel MOSFET in TO252 package, designed for medium to high voltage and high current applications. Its extremely low on-resistance and excellent thermal performance enable it to perform well under high load conditions, making it ideal for power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | 1.6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 3mΩ@VGS=4.5V
- 1.6mΩ@VGS=10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 3mΩ@VGS=4.5V
- 1.6mΩ@VGS=10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench
Domain and module applications：
Applications and modules: NVD5890NL-VB is widely used in DC-DC converters, switching power supplies, motor control, LED drivers, etc. Due to its extremely low on-resistance and high current carrying capacity, this MOSFET is very suitable for use in environments requiring high efficiency and low heat generation, and can effectively improve the overall performance of the system, especially in high power density application scenarios such as server power supplies, industrial power supplies, and automotive electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
