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NVD5890NLT4G-VB Product details
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Product Introduction
**NVD5890NLT4G-VB** is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and high current applications. The device has extremely low on-resistance (3mΩ @ VGS = 4.5V and 1.6mΩ @ VGS = 10V) and can withstand up to 120A of drain current, making it ideal for power management, motor drive and high-efficiency switching applications, which can significantly improve system efficiency and performance.
**NVD5890NLT4G-VB** is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and high current applications. The device has extremely low on-resistance (3mΩ @ VGS = 4.5V and 1.6mΩ @ VGS = 10V) and can withstand up to 120A of drain current, making it ideal for power management, motor drive and high-efficiency switching applications, which can significantly improve system efficiency and performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | 1.6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: NVD5890NLT4G-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 1.6mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench technology
- **Model**: NVD5890NLT4G-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 1.6mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Power management**:
- NVD5890NLT4G-VB is ideal for efficient DC-DC converters and load switches, which can effectively reduce power consumption and improve the efficiency of power modules, and is widely used in various power management systems.
2. **Power tools**:
- In the motor drive system of power tools, this MOSFET provides stable switching control, enhances the performance of the tool and the life of the battery, and meets the needs under high load conditions.
3. **Consumer electronics**:
- The device can be used for power management of devices such as smartphones and tablets, ensuring fast charging and stable current output, thereby improving user experience.
4. **Automotive electronics**:
- NVD5890NLT4G-VB can provide efficient power conversion in automotive power management systems, meet the high requirements of the automotive environment, and ensure the reliability and durability of the equipment.
5. **LED Driver**:
- In LED lighting applications, this MOSFET is able to provide efficient power delivery and stable light output, suitable for a variety of lighting designs and modules.
NVD5890NLT4G-VB is a powerful and efficient MOSFET suitable for many areas of modern electronic devices, meeting the needs of high performance and reliability.
1. **Power management**:
- NVD5890NLT4G-VB is ideal for efficient DC-DC converters and load switches, which can effectively reduce power consumption and improve the efficiency of power modules, and is widely used in various power management systems.
2. **Power tools**:
- In the motor drive system of power tools, this MOSFET provides stable switching control, enhances the performance of the tool and the life of the battery, and meets the needs under high load conditions.
3. **Consumer electronics**:
- The device can be used for power management of devices such as smartphones and tablets, ensuring fast charging and stable current output, thereby improving user experience.
4. **Automotive electronics**:
- NVD5890NLT4G-VB can provide efficient power conversion in automotive power management systems, meet the high requirements of the automotive environment, and ensure the reliability and durability of the equipment.
5. **LED Driver**:
- In LED lighting applications, this MOSFET is able to provide efficient power delivery and stable light output, suitable for a variety of lighting designs and modules.
NVD5890NLT4G-VB is a powerful and efficient MOSFET suitable for many areas of modern electronic devices, meeting the needs of high performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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