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NVD5865NLT4G-VB Product details
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NVD5865NLT4G-VB Product Introduction
NVD5865NLT4G-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and high current applications. With low on-resistance and excellent thermal performance, the device is very suitable for use in various power management and switching circuits to improve the overall efficiency and reliability of the system.
NVD5865NLT4G-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and high current applications. With low on-resistance and excellent thermal performance, the device is very suitable for use in various power management and switching circuits to improve the overall efficiency and reliability of the system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS**: 60V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Maximum drain current (ID)**: 58A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS**: 60V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Maximum drain current (ID)**: 58A
- **Technology**: Trench
Domain and module applications：
Applications and modules: NVD5865NLT4G-VB is widely used in power converters, DC-DC converters and motor drive modules. It is suitable for use in devices such as high-efficiency power adapters, LED drivers and intelligent power management systems, which can significantly improve the efficiency of the overall system and effectively reduce heat generation. This MOSFET provides reliable switching performance and long-term stability in power electronics, consumer electronics and industrial automation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
