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NVD5862NT4G-VB Product details
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NVD5862NT4G-VB Product Introduction
The NVD5862NT4G-VB is a high-efficiency unipolar N-channel MOSFET in a TO252 package, designed for high voltage and high current applications. With a maximum drain-source voltage (VDS) of 60V, the device is suitable for a variety of power management and switching applications. Its threshold voltage (Vth) is 3V, ensuring reliability under different driving conditions. The on-resistance is 12mΩ and 4.5mΩ at a gate voltage of 4.5V and 10V, respectively, making it excellent in switching efficiency and energy loss.
The NVD5862NT4G-VB is a high-efficiency unipolar N-channel MOSFET in a TO252 package, designed for high voltage and high current applications. With a maximum drain-source voltage (VDS) of 60V, the device is suitable for a variety of power management and switching applications. Its threshold voltage (Vth) is 3V, ensuring reliability under different driving conditions. The on-resistance is 12mΩ and 4.5mΩ at a gate voltage of 4.5V and 10V, respectively, making it excellent in switching efficiency and energy loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | 4.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: NVD5862NT4G-VB
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ (VGS=4.5V)
- 4.5mΩ (VGS=10V)
- **Maximum drain current (ID)**: 97A
- **Technology**: Trench
- **Model**: NVD5862NT4G-VB
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ (VGS=4.5V)
- 4.5mΩ (VGS=10V)
- **Maximum drain current (ID)**: 97A
- **Technology**: Trench
Domain and module applications：
Applications and modules
1. **Power management**: NVD5862NT4G-VB is widely used in high-efficiency DC-DC converters and switching power supplies. It can efficiently convert and distribute power and is suitable for power adapters and battery chargers.
2. **Electric drive system**: In power tools and electric vehicles, this MOSFET can be used as a motor drive switch to improve motor efficiency and performance and reduce energy consumption.
3. **LED lighting**: Due to its extremely low on-resistance, NVD5862NT4G-VB is very suitable for LED drive applications, providing stable current and improving the brightness and service life of LEDs.
4. **Automotive electronics**: In automotive applications, the device can be used in battery management and power distribution systems to improve system reliability and overall performance.
5. **Consumer Electronics**: NVD5862NT4G-VB also performs well in smart home devices and other portable electronic products, providing designers with efficient and compact solutions that meet the needs of modern electronic products.
With its excellent performance, NVD5862NT4G-VB has demonstrated its importance in many fields and provided reliable support for various electronic applications.
1. **Power management**: NVD5862NT4G-VB is widely used in high-efficiency DC-DC converters and switching power supplies. It can efficiently convert and distribute power and is suitable for power adapters and battery chargers.
2. **Electric drive system**: In power tools and electric vehicles, this MOSFET can be used as a motor drive switch to improve motor efficiency and performance and reduce energy consumption.
3. **LED lighting**: Due to its extremely low on-resistance, NVD5862NT4G-VB is very suitable for LED drive applications, providing stable current and improving the brightness and service life of LEDs.
4. **Automotive electronics**: In automotive applications, the device can be used in battery management and power distribution systems to improve system reliability and overall performance.
5. **Consumer Electronics**: NVD5862NT4G-VB also performs well in smart home devices and other portable electronic products, providing designers with efficient and compact solutions that meet the needs of modern electronic products.
With its excellent performance, NVD5862NT4G-VB has demonstrated its importance in many fields and provided reliable support for various electronic applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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