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NVD5862NLT4G-VB Product details
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NVD5862NLT4G-VB Product Introduction
NVD5862NLT4G-VB is a high-performance N-Channel MOSFET in TO252 package, designed for high voltage and medium current applications. The device can withstand drain-source voltage up to 60V and has a maximum drain current of up to 58A, combined with low on-resistance (RDS(ON)), making it an excellent choice in power management and switching circuits. The superior performance of NVD5862NLT4G-VB makes it an ideal choice for a variety of electronic devices, especially in terms of high efficiency and thermal management.
NVD5862NLT4G-VB is a high-performance N-Channel MOSFET in TO252 package, designed for high voltage and medium current applications. The device can withstand drain-source voltage up to 60V and has a maximum drain current of up to 58A, combined with low on-resistance (RDS(ON)), making it an excellent choice in power management and switching circuits. The superior performance of NVD5862NLT4G-VB makes it an ideal choice for a variety of electronic devices, especially in terms of high efficiency and thermal management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 58A
- **Technology**: Trench technology
- **Package type**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 58A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
1. **Power management**:
- NVD5862NLT4G-VB is very suitable for high-efficiency DC-DC converters and power modules, providing extremely low energy loss, and is widely used in telecommunications equipment, servers and industrial power systems.
2. **Motor drive**:
- Due to its high current carrying capacity, this MOSFET is suitable for various motor control applications, providing fast switching response and efficient drive, and is widely used in power tools and automation equipment.
3. **LED drive**:
- In LED lighting applications, NVD5862NLT4G-VB can be used as an efficient driver element to ensure stable current output and high brightness, improve lighting effects and extend LED life.
4. **Consumer electronics**:
- The device is suitable for power management of consumer electronics such as smartphones and tablets, optimizing charging efficiency and improving user experience.
5. **Switching Circuit**:
- The low on-resistance of NVD5862NLT4G-VB makes it suitable for a variety of switching applications, such as load switching and power switching, and can maintain stable performance under high load conditions, improving overall system efficiency.
Through these application examples, NVD5862NLT4G-VB shows its wide applicability and high performance in modern electronic design, meeting a variety of demanding electrical needs.
1. **Power management**:
- NVD5862NLT4G-VB is very suitable for high-efficiency DC-DC converters and power modules, providing extremely low energy loss, and is widely used in telecommunications equipment, servers and industrial power systems.
2. **Motor drive**:
- Due to its high current carrying capacity, this MOSFET is suitable for various motor control applications, providing fast switching response and efficient drive, and is widely used in power tools and automation equipment.
3. **LED drive**:
- In LED lighting applications, NVD5862NLT4G-VB can be used as an efficient driver element to ensure stable current output and high brightness, improve lighting effects and extend LED life.
4. **Consumer electronics**:
- The device is suitable for power management of consumer electronics such as smartphones and tablets, optimizing charging efficiency and improving user experience.
5. **Switching Circuit**:
- The low on-resistance of NVD5862NLT4G-VB makes it suitable for a variety of switching applications, such as load switching and power switching, and can maintain stable performance under high load conditions, improving overall system efficiency.
Through these application examples, NVD5862NLT4G-VB shows its wide applicability and high performance in modern electronic design, meeting a variety of demanding electrical needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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