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NVD5807NT4G-VB Product details
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Product Introduction
NVD5807NT4G is a high-efficiency N-Channel MOSFET in TO252 package with 40V drain-source voltage (VDS) and low on-resistance, designed for high current applications. This MOSFET is widely used in power management and switching power supply fields for its stable performance and reliability.
NVD5807NT4G is a high-efficiency N-Channel MOSFET in TO252 package with 40V drain-source voltage (VDS) and low on-resistance, designed for high current applications. This MOSFET is widely used in power management and switching power supply fields for its stable performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 14mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 55A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 14mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 55A
- **Technology**: Trench
Domain and module applications：
Applications and modules: NVD5807NT4G is widely used in power management, DC-DC converters, automotive electronics and other fields. Its low on-resistance makes it excellent in high-efficiency switching power supply design, effectively reducing energy loss. In automotive electronics, this MOSFET can be used in motor drive and power management systems to improve overall efficiency and response speed. In addition, the TO252 package design makes it easy to adapt to space-constrained applications to meet the needs of modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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