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NVD5803NT4G-VB Product details
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Product Introduction
NVD5803NT4G-VB is a high-performance single N-channel MOSFET in TO252 package, designed for medium and high power applications. With a rated VDS of 40V, combined with excellent conduction performance and low on-resistance, it can provide stable performance under high load conditions, suitable for various power management and switching circuits.
NVD5803NT4G-VB is a high-performance single N-channel MOSFET in TO252 package, designed for medium and high power applications. With a rated VDS of 40V, combined with excellent conduction performance and low on-resistance, it can provide stable performance under high load conditions, suitable for various power management and switching circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS**: 40V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 85A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS**: 40V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 85A
- **Technology**: Trench
Domain and module applications：
Applications and modules: NVD5803NT4G-VB is widely used in power management modules, DC-DC converters, and power tools and motor drive circuits. Its low on-resistance characteristics make it very suitable for high-efficiency switching power supplies, effectively reducing energy loss. In electric vehicles and industrial equipment, this MOSFET can support high current operation, improve system efficiency and reliability. In addition, in consumer electronics and smart home devices, it can also provide stable power control, optimize device performance and extend service life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
