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NVD5802NT4G-VB Product details
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NVD5802NT4G-VB Product Introduction
The NVD5802NT4G-VB is a highly efficient N-channel MOSFET in a TO252 package designed for power management and switching applications. The device is known for its excellent on-resistance and high leakage current carrying capability, with a VDS of 40V, making it suitable for use in high voltage environments. With its Trench technology, the NVD5802NT4G-VB is able to maintain low power consumption at high currents, improving overall system efficiency.
The NVD5802NT4G-VB is a highly efficient N-channel MOSFET in a TO252 package designed for power management and switching applications. The device is known for its excellent on-resistance and high leakage current carrying capability, with a VDS of 40V, making it suitable for use in high voltage environments. With its Trench technology, the NVD5802NT4G-VB is able to maintain low power consumption at high currents, improving overall system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | 1.6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 40V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 3V
- **RDS(ON) (on-resistance)**:
- 3mΩ @ VGS = 4.5V
- 1.6mΩ @ VGS = 10V
- **ID (continuous leakage current)**: 120A
- **Technology**: Trench technology
- **Package type**: TO252
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 40V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 3V
- **RDS(ON) (on-resistance)**:
- 3mΩ @ VGS = 4.5V
- 1.6mΩ @ VGS = 10V
- **ID (continuous leakage current)**: 120A
- **Technology**: Trench technology
Domain and module applications：
Applications and modules
NVD5802NT4G-VB excels in many fields. Here are some specific application examples:
1. **Switching power supply**: This MOSFET plays a key role in the design of efficient switching power supplies. It can be used as the main switching element to optimize energy conversion efficiency.
2. **Electric vehicles**: In the power management system of electric vehicles, NVD5802NT4G-VB can support high voltage and high current operations to ensure effective control of batteries and motors.
3. **Industrial automation**: In industrial equipment, this device is often used for power control and load switching to ensure reliable performance under high load conditions.
4. **LED driver**: In LED lighting systems, NVD5802NT4G-VB can be used for efficient current regulation to improve the overall efficiency and reliability of the system.
5. **Consumer Electronics**: In various consumer electronics products, such as smartphones and portable devices, this MOSFET can effectively manage battery power and extend usage time.
With its excellent performance, NVD5802NT4G-VB has become an ideal choice for design engineers in a variety of applications.
NVD5802NT4G-VB excels in many fields. Here are some specific application examples:
1. **Switching power supply**: This MOSFET plays a key role in the design of efficient switching power supplies. It can be used as the main switching element to optimize energy conversion efficiency.
2. **Electric vehicles**: In the power management system of electric vehicles, NVD5802NT4G-VB can support high voltage and high current operations to ensure effective control of batteries and motors.
3. **Industrial automation**: In industrial equipment, this device is often used for power control and load switching to ensure reliable performance under high load conditions.
4. **LED driver**: In LED lighting systems, NVD5802NT4G-VB can be used for efficient current regulation to improve the overall efficiency and reliability of the system.
5. **Consumer Electronics**: In various consumer electronics products, such as smartphones and portable devices, this MOSFET can effectively manage battery power and extend usage time.
With its excellent performance, NVD5802NT4G-VB has become an ideal choice for design engineers in a variety of applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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