NVD5117PLT4G-VB Product details
Product introduction:
NVD5117PLT4G-VB is a high-efficiency single P-channel MOSFET in TO252 package, designed for negative voltage applications. Its low on-resistance and good current carrying capacity make it excellent in the field of efficient power management and power conversion, ensuring the stability and efficiency of the system.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -3V | -70A | 5.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -3V | -70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -3V | -70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
- **Package**: TO252
- **Configuration**: Single P channel
- **VDS**: -60V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: -3V
- **On-resistance (RDS(ON))**:
- 8mΩ @ VGS=4.5V
- 5.5mΩ @ VGS=10V
- **Maximum leakage current (ID)**: -70A
- **Technology**: Trench technology
Domain and module applications:
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image