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NVD5117PLT4G-VB Product details

Product introduction:

Product Introduction
NVD5117PLT4G-VB is a high-efficiency single P-channel MOSFET in TO252 package, designed for negative voltage applications. Its low on-resistance and good current carrying capacity make it excellent in the field of efficient power management and power conversion, ensuring the stability and efficiency of the system.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-P -60V -3V -70A 5.5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-P -60V -3V -70A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-P -60V -3V -70A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-P
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single P channel
- **VDS**: -60V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: -3V
- **On-resistance (RDS(ON))**:
- 8mΩ @ VGS=4.5V
- 5.5mΩ @ VGS=10V
- **Maximum leakage current (ID)**: -70A
- **Technology**: Trench technology

Domain and module applications:

Applications and modules: NVD5117PLT4G-VB is widely used in switching power supplies, negative voltage power management and battery protection circuits. It plays an important role in electric vehicles, consumer electronics and industrial control systems, and can effectively manage power flow and improve the energy efficiency and reliability of the overall system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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