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NVD4815NT4G-VB Product details
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Product Introduction
NVD4815NT4G-VB is a high-performance N-channel MOSFET in TO252 package, designed for low voltage and high current applications. Its extremely low on-resistance enables it to perform well under high load conditions, meeting the high performance requirements of modern electronic devices, and is widely used in power management and switching applications.
NVD4815NT4G-VB is a high-performance N-channel MOSFET in TO252 package, designed for low voltage and high current applications. Its extremely low on-resistance enables it to perform well under high load conditions, meeting the high performance requirements of modern electronic devices, and is widely used in power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ@VGS=4.5V
- 7mΩ@VGS=10V
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ@VGS=4.5V
- 7mΩ@VGS=10V
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench
Domain and module applications：
Applications and modules: NVD4815NT4G-VB is widely used in DC-DC converters, switching power supplies, motor drives, LED lighting, etc. Due to its extremely low on-resistance and high current carrying capacity, this MOSFET is particularly suitable for use in environments requiring high efficiency and low heat generation, which can effectively improve system performance and is widely used in consumer electronics, industrial automation and automotive electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
