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NVD4809NT4G-VB Product details
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NVD4809NT4G-VB Product Introduction
The NVD4809NT4G-VB is a high-performance unipolar N-channel MOSFET in a TO252 package, designed for medium-to-high current and low voltage applications. With a maximum drain-source voltage (VDS) of 30V, the device is suitable for power management and switching applications. Its threshold voltage (Vth) is 1.7V, ensuring stable operation under different driving conditions. The on-resistance is 9mΩ and 7mΩ at gate voltages of 4.5V and 10V, respectively, optimizing switching performance and reducing energy losses.
The NVD4809NT4G-VB is a high-performance unipolar N-channel MOSFET in a TO252 package, designed for medium-to-high current and low voltage applications. With a maximum drain-source voltage (VDS) of 30V, the device is suitable for power management and switching applications. Its threshold voltage (Vth) is 1.7V, ensuring stable operation under different driving conditions. The on-resistance is 9mΩ and 7mΩ at gate voltages of 4.5V and 10V, respectively, optimizing switching performance and reducing energy losses.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: NVD4809NT4G-VB
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ (VGS=4.5V)
- 7mΩ (VGS=10V)
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench
- **Model**: NVD4809NT4G-VB
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ (VGS=4.5V)
- 7mΩ (VGS=10V)
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench
Domain and module applications：
Applications and modules
1. **Power management**: NVD4809NT4G-VB is widely used in DC-DC converters and switching power supplies, which can effectively convert and distribute power, and is suitable for power adapters and chargers.
2. **Power tools**: In power tools and motor drive applications, this MOSFET can be used as a switching element to provide stable current control, improve motor efficiency and reduce energy loss.
3. **LED lighting**: The low on-resistance of this device makes it very suitable for LED drive circuits, which can effectively control the current of LEDs, increase brightness and extend service life.
4. **Automotive electronics**: NVD4809NT4G-VB can be used for battery management and power distribution in automotive electronic systems, improving system efficiency and reliability.
5. **Consumer electronics**: This MOSFET also performs well in smart home devices and portable electronic products, providing designers with high-performance and compact design solutions to meet the needs of modern products.
With its excellent performance, NVD4809NT4G-VB demonstrates its importance in multiple fields and provides reliable support for various electronic applications.
1. **Power management**: NVD4809NT4G-VB is widely used in DC-DC converters and switching power supplies, which can effectively convert and distribute power, and is suitable for power adapters and chargers.
2. **Power tools**: In power tools and motor drive applications, this MOSFET can be used as a switching element to provide stable current control, improve motor efficiency and reduce energy loss.
3. **LED lighting**: The low on-resistance of this device makes it very suitable for LED drive circuits, which can effectively control the current of LEDs, increase brightness and extend service life.
4. **Automotive electronics**: NVD4809NT4G-VB can be used for battery management and power distribution in automotive electronic systems, improving system efficiency and reliability.
5. **Consumer electronics**: This MOSFET also performs well in smart home devices and portable electronic products, providing designers with high-performance and compact design solutions to meet the needs of modern products.
With its excellent performance, NVD4809NT4G-VB demonstrates its importance in multiple fields and provides reliable support for various electronic applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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