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NVD4809NHT4G-VB Product details
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NVD4809NHT4G-VB Product Introduction
NVD4809NHT4G-VB is a high-performance N-Channel MOSFET in TO252 package, designed for high current and medium-to-high voltage applications. The device can withstand a maximum drain-source voltage of 30V and has a maximum drain current of up to 80A, combined with extremely low on-resistance (RDS(ON)), making it an excellent performer in power management and switching circuits. The high efficiency and excellent thermal management characteristics of NVD4809NHT4G-VB make it an ideal choice for a variety of electronic devices.
NVD4809NHT4G-VB is a high-performance N-Channel MOSFET in TO252 package, designed for high current and medium-to-high voltage applications. The device can withstand a maximum drain-source voltage of 30V and has a maximum drain current of up to 80A, combined with extremely low on-resistance (RDS(ON)), making it an excellent performer in power management and switching circuits. The high efficiency and excellent thermal management characteristics of NVD4809NHT4G-VB make it an ideal choice for a variety of electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 80A
- **Technology**: Trench technology
- **Package type**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 80A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
1. **Power management**:
- NVD4809NHT4G-VB is very suitable for high-efficiency DC-DC converters, which can achieve extremely low energy loss and is widely used in computer power supplies, industrial power supplies and communication equipment.
2. **Motor drive**:
- Due to its high current carrying capacity, the device is suitable for motor control circuits, can provide fast switching response and efficient drive, and is widely used in power tools and automation equipment.
3. **LED drive**:
- In LED lighting applications, NVD4809NHT4G-VB can be used as an efficient driver element to ensure stable current output and high brightness, improve lighting effects and extend LED life.
4. **Consumer electronics**:
- This MOSFET is suitable for power management of various consumer electronic products, optimize charging efficiency, and improve user experience, especially in smartphones and portable devices.
5. **Switching Circuit**:
- The low on-resistance of NVD4809NHT4G-VB makes it suitable for a variety of switching applications, such as load switching and power switching, and can maintain stable performance under high load conditions, improving overall system efficiency.
Through these application examples, NVD4809NHT4G-VB demonstrates its wide applicability and high performance in modern electronic design, meeting a variety of demanding electrical needs.
1. **Power management**:
- NVD4809NHT4G-VB is very suitable for high-efficiency DC-DC converters, which can achieve extremely low energy loss and is widely used in computer power supplies, industrial power supplies and communication equipment.
2. **Motor drive**:
- Due to its high current carrying capacity, the device is suitable for motor control circuits, can provide fast switching response and efficient drive, and is widely used in power tools and automation equipment.
3. **LED drive**:
- In LED lighting applications, NVD4809NHT4G-VB can be used as an efficient driver element to ensure stable current output and high brightness, improve lighting effects and extend LED life.
4. **Consumer electronics**:
- This MOSFET is suitable for power management of various consumer electronic products, optimize charging efficiency, and improve user experience, especially in smartphones and portable devices.
5. **Switching Circuit**:
- The low on-resistance of NVD4809NHT4G-VB makes it suitable for a variety of switching applications, such as load switching and power switching, and can maintain stable performance under high load conditions, improving overall system efficiency.
Through these application examples, NVD4809NHT4G-VB demonstrates its wide applicability and high performance in modern electronic design, meeting a variety of demanding electrical needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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