中文
English
NVD4806NT4G-VB Product details
Back to previous pageProduct introduction：
Product Introduction
NVD4806NT4G-VB is a high-efficiency single N-channel MOSFET in TO252 package, designed for high power applications. Its rated VDS is 30V, combined with excellent conduction performance and extremely low on-resistance, making it excel in a variety of power management and switching applications, and capable of stable operation under high load conditions.
NVD4806NT4G-VB is a high-efficiency single N-channel MOSFET in TO252 package, designed for high power applications. Its rated VDS is 30V, combined with excellent conduction performance and extremely low on-resistance, making it excel in a variety of power management and switching applications, and capable of stable operation under high load conditions.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS**: 30V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS**: 30V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Applications and modules: NVD4806NT4G-VB is widely used in power management modules, DC-DC converters and drive circuits of power tools. Its extremely low on-resistance makes it very suitable for high-efficiency switching power supplies, significantly reducing energy losses. In electric vehicles and renewable energy systems, this MOSFET can support high current operations and improve the efficiency and reliability of the overall system. In addition, in industrial automation and smart home devices, it can also provide stable power control and fast response to optimize the performance of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
