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NVD3055L170T4G-VB Product details

Product introduction:

Product Introduction
NVD3055L170T4G-VB is a high-efficiency N-channel MOSFET in TO252 package, designed for medium voltage and current applications. It has a reasonable on-resistance and is suitable for stable performance in multiple power management and switching applications, especially under higher current conditions.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 60V 1.7V 18A 73mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 60V 1.7V 18A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 60V 1.7V 18A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ@VGS=4.5V
- 73mΩ@VGS=10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Trench

Domain and module applications:

Applications and modules: NVD3055L170T4G-VB is widely used in DC-DC converters, power management systems, motor drives, LED lighting, etc. Its moderate on-resistance and high current carrying capacity make it very suitable for applications that require high efficiency and low heat generation, especially in consumer electronics, industrial control and automotive electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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