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NVD2955T4G-VB Product details
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NVD2955T4G-VB Product Introduction
NVD2955T4G-VB is a high-performance single P-channel MOSFET in TO252 package, designed for negative voltage and switching applications. The device has good conduction performance and reliability, suitable for use in a variety of power management and switching circuits, and can effectively improve the efficiency of the system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | 100mΩ | 90mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single P channel
- **VDS**: -60V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS=4.5V
- 90mΩ @ VGS=10V
- **Maximum drain current (ID)**: -30A
- **Technology**: Trench
Domain and module applications：
Applications and modules: NVD2955T4G-VB is widely used in negative power converters, negative voltage switches and motor drive modules. It is suitable for portable electronic devices, battery management systems and high-efficiency power adapters, and can provide efficient power solutions in limited spaces. This MOSFET can provide reliable performance and stability in consumer electronics, communication equipment and industrial automation.
Technical support：
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