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NVD20N03L27T4G-VB Product details
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NVD20N03L27T4G-VB Product Introduction
NVD20N03L27T4G-VB is a high-performance N-Channel MOSFET in TO252 package, designed for medium and high voltage and current applications. The device can withstand drain-source voltage up to 30V and has a maximum drain current of up to 70A, combined with low on-resistance (RDS(ON)), making it an excellent performer in power management and switching circuits. The superior performance of NVD20N03L27T4G-VB makes it an ideal choice for a variety of electrical applications, especially in terms of efficiency and thermal management.
NVD20N03L27T4G-VB is a high-performance N-Channel MOSFET in TO252 package, designed for medium and high voltage and current applications. The device can withstand drain-source voltage up to 30V and has a maximum drain current of up to 70A, combined with low on-resistance (RDS(ON)), making it an excellent performer in power management and switching circuits. The superior performance of NVD20N03L27T4G-VB makes it an ideal choice for a variety of electrical applications, especially in terms of efficiency and thermal management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 70A
- **Technology**: Trench technology
- **Package type**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 70A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Power management**:
- NVD20N03L27T4G-VB is ideal for efficient DC-DC converters, providing extremely low energy loss, and is widely used in computer power supplies and communication equipment.
2. **Switching circuits**:
- The low on-resistance of this MOSFET makes it suitable for a variety of switching applications, such as load switching and power switching, and can maintain stable performance under high load conditions to improve system efficiency.
3. **Motor drive**:
- Due to its high current carrying capacity, this device is suitable for motor control circuits, providing fast switching response and efficient drive, and is widely used in power tools and automation equipment.
4. **LED drive**:
- In LED lighting applications, NVD20N03L27T4G-VB can be used as an efficient driver component to ensure stable current output, improve lighting effects and product life.
5. **Consumer Electronics**:
- The device is suitable for power management of various consumer electronic products, optimizing charging efficiency and improving user experience, especially in smartphones and portable devices.
Through these application examples, NVD20N03L27T4G-VB shows its wide applicability and high performance in modern electronic design, meeting a variety of demanding electrical needs.
1. **Power management**:
- NVD20N03L27T4G-VB is ideal for efficient DC-DC converters, providing extremely low energy loss, and is widely used in computer power supplies and communication equipment.
2. **Switching circuits**:
- The low on-resistance of this MOSFET makes it suitable for a variety of switching applications, such as load switching and power switching, and can maintain stable performance under high load conditions to improve system efficiency.
3. **Motor drive**:
- Due to its high current carrying capacity, this device is suitable for motor control circuits, providing fast switching response and efficient drive, and is widely used in power tools and automation equipment.
4. **LED drive**:
- In LED lighting applications, NVD20N03L27T4G-VB can be used as an efficient driver component to ensure stable current output, improve lighting effects and product life.
5. **Consumer Electronics**:
- The device is suitable for power management of various consumer electronic products, optimizing charging efficiency and improving user experience, especially in smartphones and portable devices.
Through these application examples, NVD20N03L27T4G-VB shows its wide applicability and high performance in modern electronic design, meeting a variety of demanding electrical needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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