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NVD14N03RT4G-VB Product details
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Product Introduction
NVD14N03RT4G is a high-performance N-Channel MOSFET in TO252 package with 30V drain-source voltage (VDS) and excellent on-resistance, which is particularly suitable for high current and high-efficiency power management applications. This MOSFET is designed to provide excellent performance and reliability, suitable for a variety of electronic devices and systems.
NVD14N03RT4G is a high-performance N-Channel MOSFET in TO252 package with 30V drain-source voltage (VDS) and excellent on-resistance, which is particularly suitable for high current and high-efficiency power management applications. This MOSFET is designed to provide excellent performance and reliability, suitable for a variety of electronic devices and systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 70A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 70A
- **Technology**: Trench
Domain and module applications：
Applications and modules: NVD14N03RT4G is widely used in power management, DC-DC converters, power tools, and automotive electronics. Its low on-resistance and high current capability make it an excellent choice for high-efficiency switching power supply designs, effectively reducing energy loss. In power tools, it can be used for motor drive and control, improving the efficiency and performance of the equipment. At the same time, the TO252 package design makes it convenient in space-constrained applications, meeting the needs of modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
