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NVB6412ANT4G-VB Product details
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Product Introduction
NVB6412ANT4G-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high voltage and high current applications. Its rated VDS is 100V, combined with excellent conduction performance and low on-resistance, making it very suitable for various power management and switching applications, and can work stably under high load conditions.
NVB6412ANT4G-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high voltage and high current applications. Its rated VDS is 100V, combined with excellent conduction performance and low on-resistance, making it very suitable for various power management and switching applications, and can work stably under high load conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single N-channel
- **VDS**: 100V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single N-channel
- **VDS**: 100V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Applications and modules: NVB6412ANT4G-VB is widely used in high-power DC-DC converters, industrial power systems, and electric vehicle drive circuits. Its low on-resistance makes it perform well in power management and inverters, effectively reducing energy loss. In renewable energy and smart grid technologies, this MOSFET can also support efficient power conversion and distribution, improving system reliability and efficiency. In addition, it is also commonly used in high-end consumer electronics to optimize power control, ensuring better performance and longer service life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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