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NVB5860N-VB Product details
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NVB5860N-VB Product Introduction
NVB5860N-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high voltage and high current applications. The device has extremely low on-resistance and excellent thermal performance, which is very suitable for high-efficiency power management and switching circuits, and can effectively improve system efficiency.
NVB5860N-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high voltage and high current applications. The device has extremely low on-resistance and excellent thermal performance, which is very suitable for high-efficiency power management and switching circuits, and can effectively improve system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | 3.2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single N-channel
- **VDS**: 60V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 3.2mΩ @ VGS=10V
- **Maximum drain current (ID)**: 210A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single N-channel
- **VDS**: 60V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 3.2mΩ @ VGS=10V
- **Maximum drain current (ID)**: 210A
- **Technology**: Trench
Domain and module applications：
Applications and modules: NVB5860N-VB is widely used in power converters, DC-DC converters and high-efficiency motor drive modules. Its low RDS(ON) characteristics make it suitable for high-power devices such as smart power adapters, LED drivers and high-power motor controllers, which can significantly improve the efficiency of the overall system and reduce heat generation. This MOSFET has demonstrated reliable switching performance and stability in power electronics, consumer electronics and industrial automation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
