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NVB5860NT4G-VB Product details
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NVB5860NT4G-VB Product Introduction
NVB5860NT4G-VB is a high-performance unipolar N-channel MOSFET in TO263 package, designed for high voltage and high current applications. With a maximum drain-source voltage (VDS) of 60V, the device is suitable for various power management and power conversion fields. Its threshold voltage (Vth) is 3V, ensuring reliable operation under a variety of driving conditions. The on-resistance is 12mΩ and 3.2mΩ at gate voltages of 4.5V and 10V, respectively, greatly improving switching efficiency and energy utilization.
NVB5860NT4G-VB is a high-performance unipolar N-channel MOSFET in TO263 package, designed for high voltage and high current applications. With a maximum drain-source voltage (VDS) of 60V, the device is suitable for various power management and power conversion fields. Its threshold voltage (Vth) is 3V, ensuring reliable operation under a variety of driving conditions. The on-resistance is 12mΩ and 3.2mΩ at gate voltages of 4.5V and 10V, respectively, greatly improving switching efficiency and energy utilization.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | 3.2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: NVB5860NT4G-VB
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ (VGS=4.5V)
- 3.2mΩ (VGS=10V)
- **Maximum drain current (ID)**: 210A
- **Technology**: Trench
- **Model**: NVB5860NT4G-VB
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ (VGS=4.5V)
- 3.2mΩ (VGS=10V)
- **Maximum drain current (ID)**: 210A
- **Technology**: Trench
Domain and module applications：
Applications and modules
1. **Power management**: NVB5860NT4G-VB is widely used in high-efficiency DC-DC converters, providing excellent energy conversion and power distribution, and is suitable for power adapters and charging devices.
2. **Electric drive system**: In power tools and electric vehicles, this MOSFET can be used as a motor drive switch to improve motor efficiency and performance and reduce energy consumption.
3. **LED lighting**: The low on-resistance of this device makes it very suitable for LED drive circuits, which can stably control LED current, improve brightness and extend service life.
4. **Automotive electronics**: In automotive applications, NVB5860NT4G-VB can be used for battery management systems and power distribution, improving the reliability and overall performance of electrical systems.
5. **Consumer electronics**: This MOSFET is also widely used in smart homes and other portable electronic devices, providing designers with high-efficiency and compact design solutions to meet the needs of modern products.
With its excellent performance, NVB5860NT4G-VB demonstrates its importance in multiple fields and provides reliable support for various electronic applications.
1. **Power management**: NVB5860NT4G-VB is widely used in high-efficiency DC-DC converters, providing excellent energy conversion and power distribution, and is suitable for power adapters and charging devices.
2. **Electric drive system**: In power tools and electric vehicles, this MOSFET can be used as a motor drive switch to improve motor efficiency and performance and reduce energy consumption.
3. **LED lighting**: The low on-resistance of this device makes it very suitable for LED drive circuits, which can stably control LED current, improve brightness and extend service life.
4. **Automotive electronics**: In automotive applications, NVB5860NT4G-VB can be used for battery management systems and power distribution, improving the reliability and overall performance of electrical systems.
5. **Consumer electronics**: This MOSFET is also widely used in smart homes and other portable electronic devices, providing designers with high-efficiency and compact design solutions to meet the needs of modern products.
With its excellent performance, NVB5860NT4G-VB demonstrates its importance in multiple fields and provides reliable support for various electronic applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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