中文
English
NVB5860NL-VB Product details
Back to previous pageProduct introduction：
NVB5860NL-VB Product Introduction
NVB5860NL-VB is a high-performance N-Channel MOSFET in TO263 package, designed for high voltage and high current applications. The device has a maximum drain-source voltage of 60V and a maximum drain current of up to 270A, combined with ultra-low on-resistance (RDS(ON)), making it an excellent choice in power management and switching circuits. The excellent thermal performance and high efficiency of NVB5860NL-VB make it an ideal choice for a variety of high power applications.
NVB5860NL-VB is a high-performance N-Channel MOSFET in TO263 package, designed for high voltage and high current applications. The device has a maximum drain-source voltage of 60V and a maximum drain current of up to 270A, combined with ultra-low on-resistance (RDS(ON)), making it an excellent choice in power management and switching circuits. The excellent thermal performance and high efficiency of NVB5860NL-VB make it an ideal choice for a variety of high power applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | 2.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 7mΩ @ VGS=4.5V
- 2.5mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 270A
- **Technology**: Trench technology
- **Package type**: TO263
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 7mΩ @ VGS=4.5V
- 2.5mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 270A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
1. **Power management**:
- NVB5860NL-VB is ideal for efficient DC-DC converters and power modules, providing extremely low energy loss during power conversion, and is widely used in servers, telecommunications equipment, and industrial power systems.
2. **Motor drive**:
- Due to its high current handling capability, this MOSFET is suitable for a variety of motor control applications, including power tools and automation equipment, enabling fast switching and efficient driving.
3. **Battery management system**:
- In electric vehicles and energy storage systems, NVB5860NL-VB can be used for battery charge and discharge control, ensuring safety and efficiency under high load conditions and optimizing energy management.
4. **Consumer electronics**:
- The device is suitable for power management of consumer electronics such as smartphones and tablets, improving battery charging speed and usage efficiency, and improving user experience.
5. **LED Driver**:
- In LED lighting applications, NVB5860NL-VB can be used as an efficient driver to ensure stable current output and high brightness, improve lighting effects and product life.
Through these application examples, NVB5860NL-VB demonstrates its wide applicability and high efficiency in modern electronic design, meeting a variety of demanding electrical needs.
1. **Power management**:
- NVB5860NL-VB is ideal for efficient DC-DC converters and power modules, providing extremely low energy loss during power conversion, and is widely used in servers, telecommunications equipment, and industrial power systems.
2. **Motor drive**:
- Due to its high current handling capability, this MOSFET is suitable for a variety of motor control applications, including power tools and automation equipment, enabling fast switching and efficient driving.
3. **Battery management system**:
- In electric vehicles and energy storage systems, NVB5860NL-VB can be used for battery charge and discharge control, ensuring safety and efficiency under high load conditions and optimizing energy management.
4. **Consumer electronics**:
- The device is suitable for power management of consumer electronics such as smartphones and tablets, improving battery charging speed and usage efficiency, and improving user experience.
5. **LED Driver**:
- In LED lighting applications, NVB5860NL-VB can be used as an efficient driver to ensure stable current output and high brightness, improve lighting effects and product life.
Through these application examples, NVB5860NL-VB demonstrates its wide applicability and high efficiency in modern electronic design, meeting a variety of demanding electrical needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
