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NVB5426NT4G-VB Product details
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Product Introduction
NVB5426NT4G is a high-efficiency N-Channel MOSFET in TO263 package with 60V drain-source voltage (VDS) and ultra-low on-resistance, which is particularly suitable for high current applications. This MOSFET is designed to provide excellent performance and reliability, suitable for a variety of high-efficiency power management and switching applications.
NVB5426NT4G is a high-efficiency N-Channel MOSFET in TO263 package with 60V drain-source voltage (VDS) and ultra-low on-resistance, which is particularly suitable for high current applications. This MOSFET is designed to provide excellent performance and reliability, suitable for a variety of high-efficiency power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | 3.2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 3.2mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 210A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 3.2mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 210A
- **Technology**: Trench
Domain and module applications：
Applications and modules: NVB5426NT4G is widely used in power management, DC-DC converters, electric vehicles, industrial equipment and other fields. Due to its high current carrying capacity and extremely low on-resistance, it is particularly suitable for high-efficiency switching power supply design, which can significantly reduce energy loss. In electric vehicles, this MOSFET can be used for motor drive and battery management to improve the overall efficiency of the system. In addition, its TO263 package makes it suitable for use in space-constrained applications, meeting the needs of modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
