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NVB25P06T4G-VB Product details

Product introduction:

NVB25P06T4G-VB Product Introduction
NVB25P06T4G-VB is a high-performance single P-channel MOSFET in TO263 package, designed for low voltage and high current applications. The device has low on-resistance and excellent thermal management performance, suitable for use in various power switches and drive circuits.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-P -60V -1.7V -35A 48mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-P -60V -1.7V -35A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-P -60V -1.7V -35A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-P
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single P channel
- **VDS**: -60V
- **VGS**: ±20V
- **Vth**: -1.7V
- **RDS(ON)**: 60mΩ @ VGS=4.5V, 48mΩ @ VGS=10V
- **ID**: -35A
- **Technology**: Trench

Domain and module applications:

Application fields and modules: NVB25P06T4G-VB is widely used in power management, reverse protection, motor drive and battery management systems. Its low on-resistance makes it excellent in high-efficiency switching circuits, which can effectively reduce power consumption and improve overall system efficiency. In addition, the device is also suitable for LED driving and industrial automation applications, ensuring high reliability and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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