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NTx85N03-VB Product details
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NTx85N03-VB Product Introduction
NTx85N03-VB is a high-performance N-Channel MOSFET in TO263 package, designed for high current and high efficiency applications. The device has a maximum drain-source voltage of 30V and a leakage current capability of up to 98A, combined with extremely low on-resistance (RDS(ON)), making it very suitable for various power management and switching circuits. The high efficiency and excellent thermal management characteristics of NTx85N03-VB make it an excellent performer in applications requiring high performance.
NTx85N03-VB is a high-performance N-Channel MOSFET in TO263 package, designed for high current and high efficiency applications. The device has a maximum drain-source voltage of 30V and a leakage current capability of up to 98A, combined with extremely low on-resistance (RDS(ON)), making it very suitable for various power management and switching circuits. The high efficiency and excellent thermal management characteristics of NTx85N03-VB make it an excellent performer in applications requiring high performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 98A
- **Technology**: Trench technology
- **Package type**: TO263
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 98A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
1. **Power management**:
- NTx85N03-VB is widely used in high-efficiency DC-DC converters and power modules, which can achieve extremely low energy loss during power conversion and is very suitable for applications requiring high power density, such as servers and data centers.
2. **Motor drive**:
- The high current carrying capacity of this MOSFET makes it very suitable for motor control and drive circuits, providing fast switching response and high efficiency, and is widely used in industrial automation and power tools.
3. **Battery management**:
- In battery management systems, NTx85N03-VB can be used for battery charge and discharge control to ensure safety and efficiency under high load conditions, especially in electric vehicles and portable devices.
4. **Consumer electronics**:
- The device is suitable for a variety of consumer electronics products, such as smartphones, tablets, etc., to optimize power management and charging efficiency, improve user experience and product performance.
5. **LED Driver**:
- NTx85N03-VB can be used in LED driver applications to ensure efficient current control and stable brightness output, improve lighting effects and extend LED life.
Through these application examples, NTx85N03-VB shows its wide applicability and efficient performance in modern electronic design, meeting a variety of demanding electrical needs.
1. **Power management**:
- NTx85N03-VB is widely used in high-efficiency DC-DC converters and power modules, which can achieve extremely low energy loss during power conversion and is very suitable for applications requiring high power density, such as servers and data centers.
2. **Motor drive**:
- The high current carrying capacity of this MOSFET makes it very suitable for motor control and drive circuits, providing fast switching response and high efficiency, and is widely used in industrial automation and power tools.
3. **Battery management**:
- In battery management systems, NTx85N03-VB can be used for battery charge and discharge control to ensure safety and efficiency under high load conditions, especially in electric vehicles and portable devices.
4. **Consumer electronics**:
- The device is suitable for a variety of consumer electronics products, such as smartphones, tablets, etc., to optimize power management and charging efficiency, improve user experience and product performance.
5. **LED Driver**:
- NTx85N03-VB can be used in LED driver applications to ensure efficient current control and stable brightness output, improve lighting effects and extend LED life.
Through these application examples, NTx85N03-VB shows its wide applicability and efficient performance in modern electronic design, meeting a variety of demanding electrical needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
