NTTFS5820NLTWG is a high-performance N-Channel MOSFET in DFN8 (3x3) package with 60V drain-source voltage (VDS) and extremely low on-resistance. This MOSFET is designed for high-efficiency power management and switching applications, and can provide stable performance in a variety of environments.
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| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-N | 60V | 2.5V | 45A | 15mΩ | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-N | 60V | 2.5V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-N | 60V | 2.5V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-N |
Detailed parameter description
- **Package**: DFN8(3x3)
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 15mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 45A
- **Technology**: Trench
Applications and modules: NTTFS5820NLTWG is widely used in power conversion, DC-DC converters and industrial control. Due to its high voltage tolerance and low on-resistance, this MOSFET is very suitable for high-efficiency switching power supply design, reducing energy loss and improving system efficiency. In power tools and consumer electronics, it can achieve fast switching and stable current control, improving overall performance. At the same time, the compact design of DFN package provides a good solution for applications with limited space.
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