Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-P |
-20V |
|
-0.6V |
-13A |
21mΩ |
|
|
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-P |
-20V |
|
-0.6V |
-13A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-P |
-20V |
|
-0.6V |
-13A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-P |
|
|
|
|
|
|
|
Detailed parameter description
- **Package**: SOP8
- **Configuration**: Single-P-Channel
- **Drain-Source Voltage(VDS)**: -20V
- **Gate-Source Voltage(VGS)**: ±20V
- **Threshold Voltage(Vth)**: -0.6V
- **On-Resistance(RDS(ON))**:
- 21mΩ (VGS=2.5V)
- 15mΩ (VGS=4.5V)
- **Maximum Drain Current(ID)**: -13A
- **Technology**: Trench
Domain and module applications：
Application areas and module examples
1. **Power management**: NTMS4101PR2G-VB can be used in DC-DC converters and power regulation circuits to reduce power consumption and improve system efficiency, especially in situations where high loads are required.
2. **Load switch**: This MOSFET is ideal for load switch applications, such as switch control in battery-powered devices, with fast response and high efficiency.
3. **Battery management system**: In battery management and protection circuits, the device can effectively control the charging and discharging process, ensure battery safety, and increase battery life.
4. **LED drive circuit**: NTMS4101PR2G-VB can be used as a switching device in LED drivers to ensure a stable current supply, thereby improving the brightness and consistency of LED lighting.
5. **Consumer electronics**: It is widely used in consumer electronics such as mobile phones and tablets as a power control element to achieve intelligent power management and energy saving effects.
In summary, NTMS4101PR2G-VB is a high-performance P-Channel MOSFET, suitable for a variety of power management and load control applications, which can effectively improve the efficiency and reliability of equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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