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NTK3139PT5G-VB Product details
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Product Introduction
**NTK3139PT5G-VB** is a single P-channel MOSFET in a SOT723-3 package with high performance and compact design, developed for low power applications. The low turn-on voltage and low on-resistance of the device make it ideal for applications that require fast switching, energy saving and low conduction losses. Its maximum drain-source voltage is -20V and the drain current is -0.78A. It uses advanced Trench technology to improve performance and efficiency.
**NTK3139PT5G-VB** is a single P-channel MOSFET in a SOT723-3 package with high performance and compact design, developed for low power applications. The low turn-on voltage and low on-resistance of the device make it ideal for applications that require fast switching, energy saving and low conduction losses. Its maximum drain-source voltage is -20V and the drain current is -0.78A. It uses advanced Trench technology to improve performance and efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P | -20V | -0.45V | -0.78A | 380mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P | -20V | -0.45V | -0.78A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P | -20V | -0.45V | -0.78A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P |
Detailed parameter description
- **Model**: NTK3139PT5G-VB
- **Package**: SOT723-3
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -0.45V
- **On-resistance (RDS(ON))**:
- @ VGS = 4.5V: 456mΩ
- @ VGS = 10V: 380mΩ
- **Maximum leakage current (ID)**: -0.78A
- **Technology**: Trench technology
- **Model**: NTK3139PT5G-VB
- **Package**: SOT723-3
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -0.45V
- **On-resistance (RDS(ON))**:
- @ VGS = 4.5V: 456mΩ
- @ VGS = 10V: 380mΩ
- **Maximum leakage current (ID)**: -0.78A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Portable electronic devices**: NTK3139PT5G-VB is suitable for low-power portable electronic devices such as smart watches, wireless headsets and other small wearable devices. Due to its low drain-source voltage and low power consumption, the device can effectively extend battery life in these applications.
2. **Power management module**: This MOSFET is suitable for power management IC or small DC-DC converter module, providing efficient power control, and is commonly used in power circuits of mobile phones, portable audio players and camera equipment.
3. **Signal control circuit**: In low-current switching signal circuits, this P-channel MOSFET can provide stable signal transmission and is suitable for switch control circuits in small household appliances, toys and low-power sensor systems.
4. **Lighting application**: In small LED lighting control applications, the device can be used as a driver switch to provide energy-saving power control, suitable for portable lighting equipment and USB-powered LED lamps.
Through its efficient conduction characteristics and compact packaging, **NTK3139PT5G-VB** provides a reliable solution for low-power and portable applications, suitable for a variety of miniaturization and energy-saving designs in modern electronic products.
1. **Portable electronic devices**: NTK3139PT5G-VB is suitable for low-power portable electronic devices such as smart watches, wireless headsets and other small wearable devices. Due to its low drain-source voltage and low power consumption, the device can effectively extend battery life in these applications.
2. **Power management module**: This MOSFET is suitable for power management IC or small DC-DC converter module, providing efficient power control, and is commonly used in power circuits of mobile phones, portable audio players and camera equipment.
3. **Signal control circuit**: In low-current switching signal circuits, this P-channel MOSFET can provide stable signal transmission and is suitable for switch control circuits in small household appliances, toys and low-power sensor systems.
4. **Lighting application**: In small LED lighting control applications, the device can be used as a driver switch to provide energy-saving power control, suitable for portable lighting equipment and USB-powered LED lamps.
Through its efficient conduction characteristics and compact packaging, **NTK3139PT5G-VB** provides a reliable solution for low-power and portable applications, suitable for a variety of miniaturization and energy-saving designs in modern electronic products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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