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NTK3139PT1G-VB Product details
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NTK3139PT1G-VB Product Introduction
The NTK3139PT1G-VB is a single P-channel MOSFET in a compact SOT723-3 package designed for low voltage applications. It has low on-resistance and threshold voltage, enabling it to operate efficiently under limited voltages. The device has a maximum drain-source voltage of -20V, making it suitable for circuit applications with limited space and low power requirements. The NTK3139PT1G-VB uses Trench technology to improve conduction efficiency and reduce power losses, making it suitable for applications in power management, portable devices, and load switches.
The NTK3139PT1G-VB is a single P-channel MOSFET in a compact SOT723-3 package designed for low voltage applications. It has low on-resistance and threshold voltage, enabling it to operate efficiently under limited voltages. The device has a maximum drain-source voltage of -20V, making it suitable for circuit applications with limited space and low power requirements. The NTK3139PT1G-VB uses Trench technology to improve conduction efficiency and reduce power losses, making it suitable for applications in power management, portable devices, and load switches.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P | -20V | -0.45V | -0.78A | 380mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P | -20V | -0.45V | -0.78A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P | -20V | -0.45V | -0.78A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P |
Detailed parameter description
- **Package type**: SOT723-3
- **Configuration**: Single-P-Channel
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -0.45V
- **On-resistance (RDS(ON))**:
- @ VGS=4.5V: 456mΩ
- @ VGS=10V: 380mΩ
- **Maximum drain current (ID)**: -0.78A
- **Technology**: Trench
- **Package type**: SOT723-3
- **Configuration**: Single-P-Channel
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -0.45V
- **On-resistance (RDS(ON))**:
- @ VGS=4.5V: 456mΩ
- @ VGS=10V: 380mΩ
- **Maximum drain current (ID)**: -0.78A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Portable electronic devices**: The NTK3139PT1G-VB is very suitable for power management modules in portable devices such as mobile phones and tablets due to its compact package and low power consumption. These devices usually require lower voltage and current, so this MOSFET can provide efficient power switching and management functions for these devices.
2. **Low-power sensor circuits**: The device can be used in various low-power sensor circuits, such as wireless sensor networks and IoT devices, to ensure high operating efficiency at extremely low currents.
3. **Load switch**: The NTK3139PT1G-VB is suitable for use in small power load switch circuits, such as smart homes, smart wearable devices, etc. It can effectively control load switches and improve the energy saving and automation capabilities of the equipment.
4. **Battery Management System**: In battery management systems that require precise control of current and voltage, such as lithium battery packs, the low on-resistance and fast switching performance of this MOSFET can help improve the operating efficiency and safety of the battery.
With its compact package design and low on-resistance, the NTK3139PT1G-VB provides an ideal solution for modern electronic designs that meet the needs of small size, high efficiency and low power consumption.
1. **Portable electronic devices**: The NTK3139PT1G-VB is very suitable for power management modules in portable devices such as mobile phones and tablets due to its compact package and low power consumption. These devices usually require lower voltage and current, so this MOSFET can provide efficient power switching and management functions for these devices.
2. **Low-power sensor circuits**: The device can be used in various low-power sensor circuits, such as wireless sensor networks and IoT devices, to ensure high operating efficiency at extremely low currents.
3. **Load switch**: The NTK3139PT1G-VB is suitable for use in small power load switch circuits, such as smart homes, smart wearable devices, etc. It can effectively control load switches and improve the energy saving and automation capabilities of the equipment.
4. **Battery Management System**: In battery management systems that require precise control of current and voltage, such as lithium battery packs, the low on-resistance and fast switching performance of this MOSFET can help improve the operating efficiency and safety of the battery.
With its compact package design and low on-resistance, the NTK3139PT1G-VB provides an ideal solution for modern electronic designs that meet the needs of small size, high efficiency and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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