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NTK3043NT1G-VB Product details
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Product Introduction
NTK3043NT1G-VB is a single N-channel MOSFET in an ultra-small SOT723-3 package, suitable for low voltage and low power applications with limited space. The device has a low threshold voltage and on-resistance, suitable for efficient power management and switching applications, especially for portable devices and battery-powered systems.
NTK3043NT1G-VB is a single N-channel MOSFET in an ultra-small SOT723-3 package, suitable for low voltage and low power applications with limited space. The device has a low threshold voltage and on-resistance, suitable for efficient power management and switching applications, especially for portable devices and battery-powered systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | 20V | 0.45V | 0.65A | 270mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | 20V | 0.45V | 0.65A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | 20V | 0.45V | 0.65A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N |
Detailed parameter description
- **Model**: NTK3043NT1G-VB
- **Package**: SOT723-3
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.45V
- **On-resistance (RDS(ON))**:
- 337.5mΩ @ VGS=4.5V
- 270mΩ @ VGS=10V
- **Maximum drain current (ID)**: 0.65A
- **Technology**: Trench technology
- **Model**: NTK3043NT1G-VB
- **Package**: SOT723-3
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.45V
- **On-resistance (RDS(ON))**:
- 337.5mΩ @ VGS=4.5V
- 270mΩ @ VGS=10V
- **Maximum drain current (ID)**: 0.65A
- **Technology**: Trench technology
Domain and module applications：
Applicable fields and modules: NTK3043NT1G-VB MOSFET is suitable for power management modules in portable devices, such as smartphones, tablets and wearable devices. Its small package and low on-resistance give it significant advantages in situations where space and power consumption are stringent. In addition, it is also suitable for load switches, DC-DC converters and other power management applications that require low voltage control, helping to optimize energy efficiency and extend battery life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
