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NTJD2152PT1G-VB Product details

Product introduction:

NTJD2152PT1G-VB Product Introduction

The NTJD2152PT1G-VB is a high-performance dual P-channel MOSFET in a compact SC70-6 package, designed for low voltage and medium current applications. Its maximum drain-source voltage (VDS) is -20V, enabling high efficiency in a variety of switching and driving applications. The device has a threshold voltage (Vth) of -0.6V, suitable for low voltage drive while ensuring reliability under different operating conditions. The on-resistance (RDS(ON)) is 235mΩ at VGS of 2.5V and 155mΩ at VGS of 4.5V, ensuring excellent conductivity and low heat generation. The maximum continuous drain current (ID) is -1.8A, enabling good performance in various power management and control applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SC70-6 Dual-P+P -20V -0.6V -1.8A 235mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SC70-6 Dual-P+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SC70-6 Dual-P+P -20V -0.6V -1.8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SC70-6 Dual-P+P -20V -0.6V -1.8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SC70-6 Dual-P+P
Detailed parameter description

- **Model**: NTJD2152PT1G-VB
- **Package**: SC70-6
- **Configuration**: Dual P channel
- **Maximum drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- 235mΩ @ VGS = 2.5V
- 155mΩ @ VGS = 4.5V
- **Maximum continuous leakage current (ID)**: -1.8A
- **Technology**: Trench

Domain and module applications:

Applications and modules

1. **Power management**:
- NTJD2152PT1G-VB is very suitable for DC-DC converters and power adapters. It achieves high efficiency with its low on-resistance and is suitable for various compact power supply designs. It can improve the overall efficiency of the power supply and reduce heat generation.

2. **Load switch**:
- In portable electronic products such as smartphones, tablets and other consumer electronic products, this MOSFET can be used as a load switch to provide reliable current control and ensure stable operation of the product under different load conditions.

3. **LED driver**:
- This device can effectively drive LED lighting systems, provide stable current output, ensure the brightness consistency and long life of LEDs, and is widely used in indoor and outdoor lighting fields.

4. **Battery Management**:
- In the battery management system, NTJD2152PT1G-VB can be used to control the battery charging and discharging process, ensuring that the battery works in a safe and efficient state, suitable for smartphones, laptops and other portable devices.

5. **Automotive Electronics**:
- This MOSFET can be used in automotive power management modules to provide reliable current control, adapt to harsh environmental conditions, and ensure the stable performance of automotive electronic systems under various driving conditions.

Through the above application examples, NTJD2152PT1G-VB demonstrates its wide applicability and excellent performance in various fields, and is a recommended dual P-channel MOSFET.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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