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NTHD2102PT1G-VB Product details

Product introduction:

Product Introduction
NTHD2102PT1G-VB is a high-efficiency single P-channel MOSFET in DFN8(3x2)-B package, designed for low voltage and high current applications. This MOSFET has excellent conduction performance and thermal management capabilities, making it very suitable for various power management and switching circuits.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X2)-B Single-P -20V -0.8V -4A 83mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X2)-B Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X2)-B Single-P -20V -0.8V -4A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X2)-B Single-P -20V -0.8V -4A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X2)-B Single-P
Detailed parameter description
- **Package**: DFN8(3x2)-B
- **Configuration**: Single-P-Channel
- **Maximum drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±8V
- **Threshold voltage (Vth)**: -0.8V
- **On-resistance (RDS(ON))**: 100mΩ @ VGS=4.5V, 83mΩ @ VGS=10V
- **Maximum leakage current (ID)**: -4A
- **Technology**: Trench technology

Domain and module applications:

Applications and modules
NTHD2102PT1G-VB is widely used in power management systems, load switches, and various low-voltage circuits. It is very suitable for applications such as DC-DC converters, power switches, and LED drivers. Due to its low on-resistance and good thermal performance, this MOSFET can effectively reduce power consumption and improve overall system efficiency, especially in portable electronics and smart home devices. In addition, it also has good application prospects in motor control and automotive electronic systems, which can meet the needs of high efficiency and compact design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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