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NTHC5513T1G-VB Product details

Product introduction:

Product Introduction

**NTHC5513T1G-VB** is a high-efficiency dual N+P channel MOSFET in DFN8(3X2)-B package, designed for medium and low voltage applications. The device has excellent conduction performance and low on-resistance, suitable for a variety of power management and switching applications. The maximum drain-source voltage of NTHC5513T1G-VB is ±20V, and the maximum continuous leakage current is 5.9A (N channel) and -4.1A (P channel), ensuring its high efficiency and reliability under various working conditions.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X2)-B Dual-N+P ±20V 0.8/-0.8V 5.9/-4.1A 32/69mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X2)-B Dual-N+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X2)-B Dual-N+P ±20V 0.8/-0.8V 5.9/-4.1A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X2)-B Dual-N+P ±20V 0.8/-0.8V 5.9/-4.1A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X2)-B Dual-N+P
Detailed parameter description

- **Model**: NTHC5513T1G-VB
- **Package**: DFN8(3X2)-B
- **Configuration**: Dual N+P channel
- **Drain-source voltage (VDS)**: ±20V
- **Gate-source voltage (VGS)**: ±8V
- **Threshold voltage (Vth)**: 0.8V / -0.8V
- **On-resistance (RDS(ON))**:
- 36mΩ / 97mΩ @ VGS = 4.5V
- 32mΩ / 69mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 5.9A (N channel) / -4.1A (P channel)
- **Technology**: Trench technology

Domain and module applications:

Application fields and module examples

1. **Power management**: NTHC5513T1G-VB is very suitable for DC-DC converters and power modules, which can significantly reduce energy loss and improve power conversion efficiency. It is widely used in computers and consumer electronic devices.

2. **Motor drive**: This MOSFET performs well in motor control applications and is suitable for small motors and servo systems, providing efficient and stable driving capabilities.

3. **Automotive electronics**: In automotive power management, NTHC5513T1G-VB can be used for battery management systems and electric power steering to ensure the efficiency and reliability of the system under various loads.

4. **LED lighting**: Due to its fast switching capability, this device is suitable for LED drive circuits to improve the efficiency of lighting systems and is widely used in commercial and home lighting.

5. **Communication equipment**: NTHC5513T1G-VB can be used for power switching and power management in wireless communication and network equipment to ensure stable operation of the equipment under high load conditions.

With its outstanding performance, NTHC5513T1G-VB has become an important component in modern electronic design and is suitable for a variety of application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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