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NTGS3441T1G-VB Product details
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NTGS3441T1G-VB Product Introduction
NTGS3441T1G-VB is a high-performance P-type MOSFET in SOT23-6 package, designed for low voltage and high-efficiency applications. With its low on-resistance and excellent current carrying capability, the device is well suited for a variety of power management and switching applications, meeting the design requirements of high performance and miniaturization.
NTGS3441T1G-VB is a high-performance P-type MOSFET in SOT23-6 package, designed for low voltage and high-efficiency applications. With its low on-resistance and excellent current carrying capability, the device is well suited for a variety of power management and switching applications, meeting the design requirements of high performance and miniaturization.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
Detailed parameter description
- **Package**: SOT23-6
- **Configuration**: Single P channel
- **VDS**: -30V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **RDS(ON)**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- **Drain current (ID)**: -4.8A
- **Technology**: Trench
- **Package**: SOT23-6
- **Configuration**: Single P channel
- **VDS**: -30V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **RDS(ON)**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- **Drain current (ID)**: -4.8A
- **Technology**: Trench
Domain and module applications：
Applications and modules: NTGS3441T1G-VB is widely used in power management, switching power supplies, load switches and other fields. Its low on-resistance makes it very suitable for high-efficiency DC-DC converters and LED drive circuits, which can reduce heat generation while being highly efficient. In addition, this MOSFET is also suitable for portable electronic devices, automotive electronics and industrial control systems, providing stable performance to meet various power management needs. Through its efficient design, NTGS3441T1G-VB can help improve the energy efficiency and reliability of the overall system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
