中文
English
NTGS3433T1G-VB Product details
Back to previous pageProduct introduction：
Product Introduction
NTGS3433T1G-VB is a high-performance P-channel MOSFET in SOT23-6 package, designed for low voltage applications. Its excellent conduction performance and low RDS(ON) characteristics make it perform well in various power management and load switching applications, and is suitable for efficient power solutions.
NTGS3433T1G-VB is a high-performance P-channel MOSFET in SOT23-6 package, designed for low voltage applications. Its excellent conduction performance and low RDS(ON) characteristics make it perform well in various power management and load switching applications, and is suitable for efficient power solutions.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
Detailed parameter description
- **Package**: SOT23-6
- **Configuration**: Single-P-Channel
- **VDS**: -30V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **RDS(ON)**: 54mΩ (@VGS=4.5V), 49mΩ (@VGS=10V)
- **ID**: -4.8A
- **Technology**: Trench technology
- **Package**: SOT23-6
- **Configuration**: Single-P-Channel
- **VDS**: -30V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **RDS(ON)**: 54mΩ (@VGS=4.5V), 49mΩ (@VGS=10V)
- **ID**: -4.8A
- **Technology**: Trench technology
Domain and module applications：
Applications and modules
NTGS3433T1G-VB is suitable for multiple fields such as power management, load switching and battery protection circuits. Its low on-resistance enables it to work efficiently in DC-DC converters and switching power supplies, reducing energy losses. In addition, this MOSFET is also suitable for power control in electric vehicles and consumer electronics such as LED drive circuits, ensuring system efficiency and reliability.
NTGS3433T1G-VB is suitable for multiple fields such as power management, load switching and battery protection circuits. Its low on-resistance enables it to work efficiently in DC-DC converters and switching power supplies, reducing energy losses. In addition, this MOSFET is also suitable for power control in electric vehicles and consumer electronics such as LED drive circuits, ensuring system efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
