中文
English
NTGD4161PT1G-VB Product details
Back to previous pageProduct introduction：
Product Introduction
NTGD4161PT1G-VB is a dual P-channel MOSFET in a SOT23-6 package designed for low voltage applications. Its maximum drain-source voltage is -20V, suitable for efficient operation in low voltage environments. The device is capable of carrying currents up to -4A and has a low on-resistance, ensuring good performance and thermal management, suitable for a variety of power management and switching applications.
NTGD4161PT1G-VB is a dual P-channel MOSFET in a SOT23-6 package designed for low voltage applications. Its maximum drain-source voltage is -20V, suitable for efficient operation in low voltage environments. The device is capable of carrying currents up to -4A and has a low on-resistance, ensuring good performance and thermal management, suitable for a variety of power management and switching applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
Detailed parameter description
- **Package**: SOT23-6
- **Configuration**: Dual P-channel
- **VDS**: -20V
- **VGS**: ±12V
- **Vth**: -0.6V
- **RDS(ON)**:
- 100mΩ (VGS=2.5V)
- 75mΩ (VGS=4.5V)
- **ID**: -4A
- **Technology**: Trench technology
- **Package**: SOT23-6
- **Configuration**: Dual P-channel
- **VDS**: -20V
- **VGS**: ±12V
- **Vth**: -0.6V
- **RDS(ON)**:
- 100mΩ (VGS=2.5V)
- 75mΩ (VGS=4.5V)
- **ID**: -4A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
NTGD4161PT1G-VB is suitable for multiple fields, including:
1. **Power management**: In load switches and power distribution circuits, it optimizes power transmission, reduces energy consumption, and ensures efficient operation of equipment.
2. **Electric drive**: In small electric devices and toys, it achieves efficient motor control and provides reliable drive solutions.
3. **Consumer electronics**: Widely used in smartphones, tablets and other portable devices as a load switch to improve the overall energy efficiency and reliability of the system.
NTGD4161PT1G-VB is suitable for multiple fields, including:
1. **Power management**: In load switches and power distribution circuits, it optimizes power transmission, reduces energy consumption, and ensures efficient operation of equipment.
2. **Electric drive**: In small electric devices and toys, it achieves efficient motor control and provides reliable drive solutions.
3. **Consumer electronics**: Widely used in smartphones, tablets and other portable devices as a load switch to improve the overall energy efficiency and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
