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NTGD3133PT1G-VB Product details
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NTGD3133PT1G-VB Product Introduction
NTGD3133PT1G-VB is a high-performance dual P-Channel MOSFET in SOT23-6 package, designed for low voltage applications. Based on Trench technology, the device provides low on-resistance and excellent switching performance, suitable for use in a variety of power management and power control applications.
NTGD3133PT1G-VB is a high-performance dual P-Channel MOSFET in SOT23-6 package, designed for low voltage applications. Based on Trench technology, the device provides low on-resistance and excellent switching performance, suitable for use in a variety of power management and power control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
Detailed parameter description
- **Package**: SOT23-6
- **Configuration**: Dual-P+P-Channel
- **VDS**: -20V
- **VGS**: ±12V
- **Vth**: -0.6V
- **RDS(ON)**: 100mΩ (VGS=2.5V) / 75mΩ (VGS=4.5V)
- **ID**: -4A
- **Technology**: Trench
- **Package**: SOT23-6
- **Configuration**: Dual-P+P-Channel
- **VDS**: -20V
- **VGS**: ±12V
- **Vth**: -0.6V
- **RDS(ON)**: 100mΩ (VGS=2.5V) / 75mΩ (VGS=4.5V)
- **ID**: -4A
- **Technology**: Trench
Domain and module applications：
Application fields and modules: NTGD3133PT1G-VB is widely used in power management modules, including efficient DC-DC converters, switching power supplies and battery management systems, and is particularly suitable for applications requiring low voltage and lower current. In addition, it is also suitable for use in load switches, LED drivers and audio amplifiers. With its good performance and low on-resistance, this MOSFET can ensure high efficiency and stability of the system to meet the needs of modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
