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NTGD1100LT1G-VB Product details
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Product Introduction
NTGD1100LT1G-VB is a high-efficiency dual P-channel MOSFET in SOT23-6 package, designed for load switching and power management applications. It has low on-resistance and good thermal performance, suitable for compact circuit design, and can achieve efficient operation in a variety of power management and switching applications.
NTGD1100LT1G-VB is a high-efficiency dual P-channel MOSFET in SOT23-6 package, designed for load switching and power management applications. It has low on-resistance and good thermal performance, suitable for compact circuit design, and can achieve efficient operation in a variety of power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
Detailed parameter description
- **Package**: SOT23-6
- **Configuration**: Dual-P+P-Channel
- **Maximum drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**: 100mΩ @ VGS=2.5V, 75mΩ @ VGS=4.5V
- **Maximum leakage current (ID)**: -4A
- **Technology**: Trench technology
- **Package**: SOT23-6
- **Configuration**: Dual-P+P-Channel
- **Maximum drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**: 100mΩ @ VGS=2.5V, 75mΩ @ VGS=4.5V
- **Maximum leakage current (ID)**: -4A
- **Technology**: Trench technology
Domain and module applications：
Applications and modules: NTGD1100LT1G-VB is widely used in various power management systems, load switches and DC motor control circuits. It is suitable for battery management and power distribution in consumer electronics, enabling fast switching and high efficiency. In addition, due to its dual P-channel design, it performs particularly well in high-side switch applications, suitable for applications requiring high switching frequency and low power consumption, such as smart home devices and automotive electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
